Magnetoresistive random access memory device and method for fabricating the same
US11258005B2 · kind B2 · utility
0Cited by
3References
13Claims
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Key dates
| Filing date | Oct 17, 2019 |
| Grant date | Feb 22, 2022 |
| Priority date | — |
| Expiry date | Jan 22, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A cell structure of magnetoresistive RAM includes a synthetic anti-ferromagnetic (SAF) layer to serve as a pinned layer; a barrier layer, disposed on the SAF layer; and a magnetic free layer, disposed on the barrier layer. The SAF layer includes: a first magnetic layer; a second magnetic layer; and a spacer layer of a first metal element sandwiched between the first magnetic layer and the second magnetic layer. The first metal element is phase separated from a second metal element of the first magnetic layer and the second magnetic layer interfacing with the spacer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.