Method of controlling convection patterns of silicon melt and method of manufacturing silicon single crystal
US11261540B2 · kind B2 · utility
1Cited by
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4Claims
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Key dates
| Filing date | Feb 27, 2019 |
| Grant date | Mar 1, 2022 |
| Priority date | — |
| Expiry date | Feb 27, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of controlling a convection pattern of a silicon melt includes applying a horizontal magnetic field having an intensity of 0.2 tesla or more to the silicon melt in a rotating quartz crucible to fix a direction of a convection flow in a plane orthogonal to an application direction of the horizontal magnetic field in the silicon melt, the horizontal magnetic field being applied so that a central magnetic field line passes through a point horizontally offset from a center axis of the quartz crucible by 10 mm or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.