Reconstituted substrate structure and fabrication methods for heterogeneous packaging integration
US11264333B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 2020 |
| Grant date | Mar 1, 2022 |
| Priority date | — |
| Expiry date | May 8, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/1476
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to thin-form-factor reconstituted substrates and methods for forming the same. The reconstituted substrates described herein may be utilized to fabricate homogeneous or heterogeneous high-density 3D integrated devices. In one embodiment, a silicon substrate is structured by direct laser patterning to include one or more cavities and one or more vias. One or more semiconductor dies of the same or different types may be placed within the cavities and thereafter embedded in the substrate upon formation of an insulating layer thereon. One or more conductive interconnections are formed in the vias and may have contact points redistributed to desired surfaces of the reconstituted substrate. The reconstituted substrate may thereafter be integrated into a stacked 3D device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.