Semiconductor die with capillary flow structures for direct chip attachment
US11264349B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 19, 2019 |
| Grant date | Mar 1, 2022 |
| Priority date | — |
| Expiry date | Feb 3, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/92125
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a capillary flow structure for a direct chip attachment is provided herein. The semiconductor device generally includes a substrate and a semiconductor die having a conductive pillar electrically coupled to the substrate. The front side of the semiconductor die may be spaced a distance apart from the substrate forming a gap. The semiconductor device further includes first and second elongate capillary flow structures projecting from the front side of the semiconductor die at least partially extending toward the substrate. The first and second elongate capillary flow structures may be spaced apart from each other at a first width configured to induce capillary flow of an underfill material along a length of the first and second elongate capillary flow structures. The first and second capillary flow structures may include pairs of elongate capillary flow structures forming passageways therebetween to induce capillary flow at an increased flow rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.