Semiconductor diodes employing back-side semiconductor or metal
US11264405B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2016 |
| Grant date | Mar 1, 2022 |
| Priority date | — |
| Expiry date | Apr 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Integrated circuit (IC) strata including one or more transistor and one or more semiconductor diode. A transistor may include one or more non-planar semiconductor bodies in which there is a channel region while the diode also includes one or more non-planar semiconductor bodies in which there is a p-type region, an n-type region, or both. One IC stratum may be only hundreds of nanometers in thickness and include both front-side and back-side interconnect levels. The front-side interconnect level is disposed over a front side of one or more of the non-planar semiconductor bodies and is coupled to at least one terminal of the transistor. The back-side interconnect level is disposed over a back side of one or more of the non-planar semiconductor bodies and is coupled to at least one terminal of the semiconductor diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.