Nathan Jack
17Patents
2h-index
28Co-inventors
50Inventor score
Filing activity: Jun 15, 2007 → Jan 9, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7831205B2 | Methods and systems for wireless communication by magnetic induction | Electricity | 36 | Active |
| US11824116B2 | Gate-all-around integrated circuit structures having devices with channel-to-substrate electrical contact | Electricity | 2 | Active |
| US11908856B2 | Gate-all-around integrated circuit structures having devices with source/drain-to-substrate electrical contact | Performing Operations; Transporting | 2 | Active |
| US9435841B2 | Integrated circuit protection during high-current ESD testing | Electricity | 1 | Active |
| US9219055B2 | Structure and method for dynamic biasing to improve ESD robustness of current mode logic (CML) drivers | Electricity | 1 | Active |
| US9869708B2 | Integrated circuit protection during high-current ESD testing | Electricity | 1 | Active |
| US12402349B2 | Gate-all-around integrated circuit structures having devices with channel-to-substrate electrical contact | Electricity | 0 | Active |
| US9620497B2 | Structure and method for dynamic biasing to improve ESD robustness of current mode logic (CML) drivers | Electricity | 0 | Active |
| US12288789B2 | Gate-all-around integrated circuit structures having devices with source/drain-to-substrate electrical contact | Performing Operations; Transporting | 0 | Active |
| US12328947B2 | Substrate-less silicon controlled rectifier (SCR) integrated circuit structures | Electricity | 0 | Active |
| US12317590B2 | Substrate-free integrated circuit structures | Electricity | 0 | Active |
| US11837641B2 | Gate-all-around integrated circuit structures having adjacent deep via substrate contacts for sub-fin electrical contact | Electricity | 0 | Active |
| US10756078B2 | Structure and method for dynamic biasing to improve ESD robustness of current mode logic (CML) drivers | Electricity | 0 | Active |
| US10359461B2 | Integrated circuit protection during high-current ESD testing | Electricity | 0 | Active |
| US11652107B2 | Substrate-less FinFET diode architectures with backside metal contact and subfin regions | Electricity | 0 | Active |
| US10181463B2 | Structure and method for dynamic biasing to improve ESD robustness of current mode logic (CML) drivers | Electricity | 0 | Active |
| US11264405B2 | Semiconductor diodes employing back-side semiconductor or metal | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.