Silicon carbide devices and methods for forming silicon carbide devices

US11264464B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Hans-Joachim Schulze · Taufkirchen, DE
• Thomas Basler · Riemerling, DE
• Andre Rainer Stegner · Unterhaching, DE

Key dates

• Filing date: Sep 19, 2019
• Grant date: Mar 1, 2022
• Expiry date: Sep 19, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D12/481

Abstract

A silicon carbide device includes a transistor cell with a front side doping region, a body region, and a drift region. The body region includes a first portion having a first average net doping concentration and a second portion having a second average net doping concentration. The first portion and the second portion have an extension of at least 50 nm in a vertical direction. The first average net doping concentration is at least two times the second average net doping concentration, and the first average net doping concentration is at least 1·1017 cm−3.