Wrap-around source/drain method of making contacts for backside metals
US11264493B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2015 |
| Grant date | Mar 1, 2022 |
| Priority date | — |
| Expiry date | Oct 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/16227
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus including a circuit structure including a first side including a device layer including a plurality of devices and an opposite second side; an electrically conductive contact coupled to one of the plurality of devices on the first side; and an electrically conductive interconnect disposed on the second side of the structure and coupled to the conductive contact. A method including forming a transistor device including a channel between a source and a drain and a gate electrode on the channel defining a first side of the device; forming an electrically conductive contact to one of the source and the drain from the first side; and forming an interconnect on a second side of the device, wherein the interconnect is coupled to the contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.