Active and dummy fin structures

US11264504B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Yanping Shen · Saratoga Springs, US
• Haiting Wang · Clifton Park, US
• Hong Yu · Rexford, US

Key dates

• Filing date: Jan 24, 2020
• Grant date: Mar 1, 2022
• Expiry date: Feb 23, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/513

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to a scheme of active and dummy fin structures and methods of manufacture. The structure includes: an active fin structure; at least one dummy fin structure running along at least one side of the active fin structure along its length; a fin cut separating the at least one dummy fin structure along its longitudinal axes; and a gate structure extending over the active fin structure and the fin cut.