Magnetoresistive devices and methods therefor
US11264564B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2020 |
| Grant date | Mar 1, 2022 |
| Priority date | — |
| Expiry date | Jun 5, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive device may include one or more electrodes or electrically conductive lines and a fixed region and a free region disposed between the electrodes or electrically conductive lines. The fixed region may have a fixed magnetic state and the free region may be configured to have a first magnetic state and a second magnetic state. The free region may store a first value when in the first magnetic state and store a second value when in the second magnetic state. The magnetoresistive device may further include a dielectric layer between the free region and the fixed region and a spin-Hall (SH) material proximate to at least a portion of the free region. An insertion layer may be disposed between the SH material and the free region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.