Patent · US Active

Multi zone electrostatic chuck

US11270903B2 · kind B2 · utility

0Cited by
4References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 17, 2019
Grant dateMar 8, 2022
Priority date
Expiry dateJan 22, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/67248
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Exemplary semiconductor processing chambers may include a pedestal comprising a platen configured to support a semiconductor substrate across a surface of the platen. The chambers may include a first conductive mesh incorporated within the platen and configured to operate as a first chucking mesh. The first conductive mesh may extend radially across the platen. The chambers may include a second conductive mesh incorporated within the platen and configured to operate as a second chucking mesh. The second conductive mesh may be characterized by an annular shape. The second conductive mesh may be disposed between the first conductive mesh and the surface of the platen.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.