Determining a critical dimension variation of a pattern
US11276160B2 · kind B2 · utility
1Cited by
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17Claims
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Assignee
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Key dates
| Filing date | Oct 1, 2018 |
| Grant date | Mar 15, 2022 |
| Priority date | — |
| Expiry date | Oct 1, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2207/30148
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A captured image of a pattern and a reference image of the pattern may be received. A contour of interest of the pattern may be identified. One or more measurements of a dimension of the pattern may be determined for each of the reference image and the captured image with respect to the contour of interest of the pattern. A defect associated with the contour of interest may be classified based on the determined one or more measurements of the dimension of the pattern for each of the reference image and the captured image.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.