Patent · US Active

Method of programming memory device and related memory device having a channel-stacked structure

US11276467B2 · kind B2 · utility

1Cited by

14References

10Claims

0Family size

Assignee

YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

Hongtao Liu · San Diego, US
Lei Jin · 红钢城街道, CN
Shan Li · 红钢城街道, CN
Yali Song · 红钢城街道, CN

Key dates

Filing date	Mar 31, 2020
Grant date	Mar 15, 2022
Priority date	—
Expiry date	Mar 31, 2040

Classification

Technology area (CPC G)Physics
CPC primaryG11C16/0483
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A vertical NAND string in a channel-stacked 3D memory device may be programmed using ISPP scheme, wherein a preparation step is introduced immediately after each verification step and before the start of a corresponding verification step. During the preparation step, the electrons accumulated in the channel may be drained by the selected bit line for enhancing the coupling effect of the channel, thereby reducing program disturb and increasing program speed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.