Scanning electron microscope and method for measuring pattern
US11276554B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2020 |
| Grant date | Mar 15, 2022 |
| Priority date | — |
| Expiry date | Jul 29, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2806
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A scanning electron microscope includes an electron-optical system including an electron source and an objective lens, a stage on which a sample is placed, a secondary electron detector disposed adjacent to the electron source relative to the objective lens and configured to detect secondary electrons, a backscattered electron detector disposed between the objective lens and the stage and configured to detect backscattered electrons, a backscattered electron detection system controller configured to apply a voltage to the backscattered electron detector, and a device-control computer configured to detect a state of an electrical charge carried by the backscattered electron detector based on signal intensity at the secondary electron detector when the primary electrons are applied to the sample with a predetermined voltage applied to the backscattered electron detector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.