Etching method and etching device
US11282714B2 · kind B2 · utility
0Cited by
2References
15Claims
0Family size
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Key dates
| Filing date | May 31, 2017 |
| Grant date | Mar 22, 2022 |
| Priority date | — |
| Expiry date | Nov 13, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/532
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The etching method of the present invention includes the step of supplying a first mixed gas containing a β-diketone-containing etching gas and a nitrogen oxide gas to a target having, on a surface, both a first metal film containing cobalt, iron, or manganese and a second metal film containing copper, thereby selectively etching the first metal film over the second metal film, or the step of supplying a second mixed gas containing a β-diketone-containing etching gas and oxygen gas to the target, thereby selectively etching the second metal film over the first metal film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.