Patent · US Active

Method of manufacturing microelectronic devices, related tools and apparatus

US11282746B2 · kind B2 · utility

0Cited by

4References

24Claims

0Family size

Assignee

Micron Technology, Inc. · US

Inventors

Suresh Upadhyayula · San Jose, US
Thiam Chye Lim · Singapore, SG

Key dates

Filing date	Dec 27, 2019
Grant date	Mar 22, 2022
Priority date	—
Expiry date	Mar 3, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/68714
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of manufacturing a microelectronic device may include forming a wiring layer on a first surface of a wafer. The method may also include forming a modified layer along separation regions for each microelectronic device of the wafer by focusing a laser on an inside portion of the wafer. The method may also include removing material from the second surface of the wafer. The wafer may be cooled to a temperature where a low dielectric constant layer extending across the separation regions is brittle while the material is removed from the second surface of the wafer. The method may further include separating the wafer along the separation region to form separate microelectronic devices.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.