Patent · US Active

Silicon carbide devices and methods for manufacturing the same

US11282805B2 · kind B2 · utility

0Cited by

4References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Michael Roesner · Villach, AT
Markus Menath · Regensburg, DE
Gudrun Stranzl · Eisenlohrsweg, AT

Key dates

Filing date	Mar 21, 2019
Grant date	Mar 22, 2022
Priority date	—
Expiry date	Mar 22, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/3512
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a silicon carbide layer, a metal carbide layer arranged over the silicon carbide layer, and a solder layer arranged over and in contact with the metal carbide layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.