Patent · US Active

Semiconductor device with a semiconductor body of silicon carbide

US11282926B2 · kind B2 · utility

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22Claims

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Assignee

Infineon Technologies AG · DE

Inventors

Hans-Joachim Schulze · Taufkirchen, DE
Wolfgang Bergner · Waldbüttelbrunn, DE
Andre Rainer Stegner · Unterhaching, DE

Key dates

Filing date	Mar 10, 2020
Grant date	Mar 22, 2022
Priority date	—
Expiry date	Mar 12, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/127
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a SiC body having a first semiconductor area of a first conductivity type and a second semiconductor area of a second conductivity type. The first semiconductor area is electrically contacted with a first surface of the SiC body and forms a pn junction with the second semiconductor area. The first and second semiconductor areas are arranged on one another in a vertical direction perpendicular to the first surface. The first semiconductor area has first and second dopant species. An average dopant concentration of the first dopant species in a first part of the first semiconductor area adjoining the first surface is greater than an average dopant concentration of the second dopant species. An average dopant concentration of the second dopant species in a second part of the first semiconductor area adjoining the second semiconductor area is greater than a dopant concentration of the first dopant species.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.