Precessional spin current structure for magnetic random access memory with novel capping materials
US11283010B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2018 |
| Grant date | Mar 22, 2022 |
| Priority date | — |
| Expiry date | Sep 7, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic memory element having a magnetic free layer and a magnetic reference layer with a non-magnetic barrier layer between the magnetic reference layer and the magnetic free layer. A spin current layer (which may be a precessional spin current layer) is located adjacent to the magnetic free layer and is separated from the magnetic free layer by a non-magnetic coupling layer. A material layer adjacent to and in contact with the spin current layer, has a material composition and thickness that are chosen to provide a desired effective magnetization in the spin current layer. The material layer, which may be a capping layer or a seed layer, can be constructed of a material other than tantalum which may include one or more of Zr, Mo, Ru, Rh, Pd, Hf, W, Ir, Pt and/or alloys and/or nitrides of these elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.