Non-volatile memory with virtual ground voltage provided to unselected column lines during memory write operation
US11289144B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2020 |
| Grant date | Mar 29, 2022 |
| Priority date | — |
| Expiry date | Sep 25, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/82
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory includes virtual ground circuitry configured to generate a virtual ground voltage at a virtual ground node, a memory array of memory cells in which each memory cell includes a select transistor and a storage element and is coupled to a first column line of a plurality of first column lines; and a first decoder configured to select a set of first column lines for a memory write operation to a selected set of the memory cells. The non-volatile memory also includes write circuitry configured to receive a write value for storage into the selected set of memory cells, and a first column line multiplexer configured to, during the memory write operation, couple each selected first column line of the set of first column lines to the write circuitry, and couple each unselected first column line of the plurality of first column lines to the virtual ground node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.