Plasma processing method and plasma processing apparatus
US11289339B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 26, 2019 |
| Grant date | Mar 29, 2022 |
| Priority date | — |
| Expiry date | Aug 1, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3341
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma processing method executed by a plasma processing apparatus includes a first step, a second step, and an etching step. In the first step, the plasma processing apparatus forms a first film on a processing target in which a plurality of openings having a predetermined pattern are formed. In the second step, the plasma processing apparatus forms a second film having an etching rate lower than that of the first film on the processing target on which the first film is formed, and having different film thicknesses on the side surfaces of the openings according to the sizes of the openings. In the etching step, the plasma processing apparatus performs etching from above the second film under a predetermined processing condition until a portion of the first film is removed from at least a portion of the processing target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.