Methods and apparatus for test pattern forming and film property measurement
US11289386B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2020 |
| Grant date | Mar 29, 2022 |
| Priority date | — |
| Expiry date | Jul 24, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6715
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for electrically characterizing a layer disposed on a substrate and electrically insulated from the substrate is disclosed. The method can include forming a test pattern, contacting the test pattern with electrical contact elements at contact regions, and measuring an electrical parameter of the layer by passing a first set of test currents between contact regions. The test pattern can be formed by pushing a pattern forming head against a top surface of the layer, introducing a first fluid into the cavity, and converting the sacrificial portion of the layer into an insulator using the first fluid and forming the test pattern under the test-pattern-shaped inner seal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.