Patent · US Active

Semiconductor device

US11290100B2 · kind B2 · utility

0Cited by

1References

21Claims

0Family size

Assignees

Kabushiki Kaisha Toshiba · JP
Toshiba Electronic Devices & Storage Corporation · JP

Inventors

Hung Hung · Yokohama, JP
Yasuhiro Isobe · Kyoto, JP
Akira Yoshioka · Yokohama, JP
Toru Sugiyama · Abiko, JP
Masaaki Iwai · Kawasaki, JP
Naonori Hosokawa · Yokohama, JP
Masaaki Onomura · Tokyo, JP
Hitoshi Kobayashi · Hirakata, JP
Tetsuya Ohno · Kawasaki, JP

Key dates

Filing date	Sep 4, 2020
Grant date	Mar 29, 2022
Priority date	—
Expiry date	Sep 4, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH03K17/74
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

Provided is a semiconductor device including a normally-off transistor having a first electrode, a second electrode, and a first control electrode, a normally-on transistor having a third electrode, a fourth electrode, and a second control electrode, a first capacitor having a first end and a second end, a Zener diode having a first anode and a first cathode, a first resistor having a third end and a fourth end, a first diode having a second anode and a second cathode, a second resistor having a fifth end and a sixth end, a second diode having a third anode and a third cathode, and a second capacitor having a seventh end and an eighth end.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.