Die attach methods and semiconductor devices manufactured based on such methods

US11296015B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Joachim Mahler · Regensburg, DE
• Giovanni Ragasa Garbin · Melaka City, MY
• Chen Wen Lee · Ipoh, MY
• Benjamin Reichert · Lappersdorf, DE
• Peter Strobel · Regensburg, DE

Key dates

• Filing date: Sep 29, 2020
• Grant date: Apr 5, 2022
• Expiry date: Sep 29, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/07802
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a carrier, a power semiconductor die that includes first and second opposite facing main surfaces, a side surface extending from the first main surface to the second main surface, and first and second electrodes disposed on the first and second main surfaces, respectively, a die attach material arranged between the carrier and the first electrode, wherein the die attach material forms a fillet at the side surface of the power semiconductor die, wherein a fillet height of the fillet is less than about 95% of a height of the power semiconductor die, wherein the height of the power semiconductor die is a length of the side surface, and wherein a maximum extension of the die attach material over edges of a main surface of the power semiconductor die facing the die attach material is less than about 200 micrometers.