Seal material for air gaps in semiconductor devices
US11296187B2 · kind B2 · utility
3Cited by
12References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 23, 2020 |
| Grant date | Apr 5, 2022 |
| Priority date | — |
| Expiry date | Jul 23, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a semiconductor device including first and second terminals formed on a fin region and a seal layer formed between the first and second terminals. The seal layer includes a silicon carbide material doped with oxygen. The semiconductor device also includes an air gap surrounded by the seal layer, the fin region, and the first and second terminals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.