Semiconductor device

US11296218B2 · kind B2 · utility

Assignees

• Infineon Technologies Austria AG · AT
• Infineon Technologies Americas Corp. · US

Inventors

• Ralf Siemieniec · Villach, AT
• Adam Amali · Hawthorne, US
• Michael Hutzler · Villach, AT
• Laszlo Juhasz · Villach, AT
• David Laforet · Villach, AT
• Cedric Ouvrard · Villach, AT
• Li Juin Yip · Villach, AT

Key dates

• Filing date: May 13, 2020
• Grant date: Apr 5, 2022
• Expiry date: Oct 7, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

A semiconductor device includes a semiconductor body having first and second opposing surfaces, an active area including active transistor cells, and an edge termination region laterally surrounding the active area. Each active transistor cell includes a mesa and a columnar trench having a field plate. The edge termination region includes inactive cells each including a columnar termination trench having a field plate, and a termination mesa including a drift region of a first conductivity type. The edge termination region includes a transition region laterally surrounding the active region and an outer termination region laterally surrounding the transition region. In the transition region, the termination mesa includes a body region of a second conductivity type arranged on the drift region. In the outer termination region, the drift region extends to the first surface. A buried doped region of the edge termination region is positioned in the transition and outer termination regions.