Extreme ultraviolet mask absorber materials
US11300871B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2020 |
| Grant date | Apr 12, 2022 |
| Priority date | — |
| Expiry date | May 12, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/60
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate, a multilayer stack of reflective layers on the substrate, a capping layer on the multilayer stack of reflecting layers, and an absorber on the capping layer. The absorber comprising a plurality of bilayers comprising a first layer of silicon and a second layer selected from the group consisting of TaSb, CSb, TaNi, TaCu, SbN, CrN, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, Pt, oxides of TaSb, CSb, TaNi, TaCu, SbN, CrN, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, Pt, and nitrides of TaSb, CSb, TaNi, TaCu, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, and Pt.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.