Patent · US Active

Composite wafer, semiconductor device and electronic component

US11302579B2 · kind B2 · utility

1Cited by

6References

5Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Paul Ganitzer · Villach, AT
Carsten von Koblinski · Velden am Wörther See, AT
Thomas Feil · Villach, AT
Gerald Lackner · Arnoldstein, AT
Jochen Mueller · Regensburg, DE
Martin Poelzl · Ossiach, AT
Tobias Polster · Villach, AT

Key dates

Filing date	May 14, 2020
Grant date	Apr 12, 2022
Priority date	—
Expiry date	May 14, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/181
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In an embodiment, a composite semiconductor substrate includes a first polymer layer and a plurality of semiconductor dies having a first surface, a second surface opposing the first surface, side faces extending between the first surface and the second surface and a first metallization structure on the first surface. Edge regions of the first surface and at least portions of the side faces are embedded in the first polymer layer. At least one metallic region of the first metallization structure is exposed from the first polymer layer. A second metallization structure is arranged on the second surface of the plurality of semiconductor dies. A second polymer layer is arranged on edge regions of the second surface of the plurality of semiconductor dies and on the first polymer layer in regions between the side faces of neighbouring ones of the plurality of semiconductor dies.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.