Fabrication of gate all around device
US11302792B2 · kind B2 · utility
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11References
20Claims
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Assignee
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Key dates
| Filing date | Aug 29, 2020 |
| Grant date | Apr 12, 2022 |
| Priority date | — |
| Expiry date | Oct 15, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/122
Abstract
A device includes a nanowire, a gate dielectric layer, a gate electrode, a gate pickup metal layer, and a gate contact. The nanowire extends in a direction perpendicular to a top surface of a substrate. The gate dielectric layer laterally surrounds the nanowire. The gate electrode laterally surrounds the gate dielectric layer. The gate pickup metal layer is in contact with a bottom surface of the gate electrode and extends laterally past opposite sidewalls of the gate electrode. The gate contact is in contact with the gate pickup metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.