Method of improving read current stability in analog non-volatile memory by program adjustment for memory cells exhibiting random telegraph noise
US11309042B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2020 |
| Grant date | Apr 19, 2022 |
| Priority date | — |
| Expiry date | Jun 29, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2216/04
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and device for programming a non-volatile memory cell, where the non-volatile memory cell includes a first gate. The non-volatile memory cell is programmed to an initial program state that corresponds to meeting or exceeding a target threshold voltage for the first gate of the non-volatile memory cell. The target threshold voltage corresponds to a target read current. The non-volatile memory cell is read in a first read operation using a read voltage applied to the first gate of the non-volatile memory cell that is less than the target threshold voltage to generate a first read current. The non-volatile memory cell is subjected to additional programming in response to determining that the first read current is greater than the target read current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.