Patent · US Active

Power semiconductor package having integrated inductor, resistor and capacitor

US11309233B2 · kind B2 · utility

0Cited by
2References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 25, 2020
Grant dateApr 19, 2022
Priority date
Expiry dateMar 28, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/19105
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A power semiconductor package comprises a lead frame, a low side field-effect transistor (FET), a high side FET, a capacitor, a resistor, an inductor assembly, a first plurality of bonding wires, and a molding encapsulation. In one example, an entirety of the inductor assembly is disposed at a position higher than an entirety of the low side FET, higher than an entirety of the high side FET, and higher than an entirety of the first plurality of bonding wires. In another example, a bottom surface of the low side FET and a bottom surface of the inductor assembly are co-planar.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.