Power semiconductor package having integrated inductor, resistor and capacitor
US11309233B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2020 |
| Grant date | Apr 19, 2022 |
| Priority date | — |
| Expiry date | Mar 28, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor package comprises a lead frame, a low side field-effect transistor (FET), a high side FET, a capacitor, a resistor, an inductor assembly, a first plurality of bonding wires, and a molding encapsulation. In one example, an entirety of the inductor assembly is disposed at a position higher than an entirety of the low side FET, higher than an entirety of the high side FET, and higher than an entirety of the first plurality of bonding wires. In another example, a bottom surface of the low side FET and a bottom surface of the inductor assembly are co-planar.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.