Digit line formation for horizontally oriented access devices
US11309315B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2020 |
| Grant date | Apr 19, 2022 |
| Priority date | — |
| Expiry date | Oct 6, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/31
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Systems, methods, and apparatuses are provided for digit line formation for horizontally oriented access devices. One example method includes forming layers of a first dielectric material, a low doped semiconductor material, and a second dielectric material, in repeating iterations vertically to form a vertical stack, forming a vertical opening in the vertical stack, selectively etching the second dielectric material to form a horizontal opening in the second dielectric material, gas phase doping a dopant on a top surface of the low doped semiconductor material in the horizontal opening to form a source/drain region, forming a high doped semiconductor material in the horizontal opening, selectively etching the high doped semiconductor material formed in the horizontal opening such that a portion of the high doped semiconductor material remains, and converting the remaining high doped semiconductor material to a conductive material having a different characteristic from the remaining high doped semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.