Fin field effect transistor (finFET) device structure and method for forming the same
US11309423B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2019 |
| Grant date | Apr 19, 2022 |
| Priority date | — |
| Expiry date | Apr 29, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A FinFET device structure and method for forming the same are provided. The FinFET device structure includes a first fin structure over a substrate, and a second fin structure over the substrate. The FinFET device structure also includes a first isolation structure over the substrate and surrounding the first fin structure. The first fin structure is protruded from a top surface of the first isolation structure. The FinFET device structure further includes a second isolation structure over the substrate and surrounding the second fin structure. The second fin structure is protruded from a top surface of the second isolation structure, and the first fin structure has a vertical sidewall surface and the second fin structure has a sloped sidewall surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.