Adaptive geometry for optimal focused ion beam etching
US11315754B2 · kind B2 · utility
0Cited by
9References
18Claims
0Family size
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Key dates
| Filing date | Apr 27, 2020 |
| Grant date | Apr 26, 2022 |
| Priority date | — |
| Expiry date | Apr 27, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31749
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of evaluating a region of a sample that includes alternating layers of different material. The method includes milling, with a focused ion beam, a portion of the sample that includes the alternating layers of different material; reducing the milling area; and repeating the milling and reducing steps multiple times during the delayering process until the process is complete.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.