Patent · US Active

Adaptive geometry for optimal focused ion beam etching

US11315754B2 · kind B2 · utility

0Cited by
9References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 27, 2020
Grant dateApr 26, 2022
Priority date
Expiry dateApr 27, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/31749
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A method of evaluating a region of a sample that includes alternating layers of different material. The method includes milling, with a focused ion beam, a portion of the sample that includes the alternating layers of different material; reducing the milling area; and repeating the milling and reducing steps multiple times during the delayering process until the process is complete.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.