Methods and apparatus for processing a substrate
US11315771B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2020 |
| Grant date | Apr 26, 2022 |
| Priority date | — |
| Expiry date | Jul 19, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3426
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and apparatus for processing a substrate are provided herein. A method, for example, includes igniting a plasma at a first pressure within a processing volume of a process chamber; depositing sputter material from a target disposed within the processing volume while decreasing the first pressure to a second pressure within a first time frame while maintaining the plasma; continuing to deposit sputter material from the target while decreasing the second pressure to a third pressure within a second time frame less than the first time frame while maintaining the plasma; and continuing to deposit sputter material from the target while maintaining the third pressure for a third time frame that is greater than or equal to the second time frame while maintaining the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.