Enhanced substrate amorphization using intermittent ion exposure
US11315790B2 · kind B2 · utility
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4References
15Claims
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Key dates
| Filing date | Oct 22, 2019 |
| Grant date | Apr 26, 2022 |
| Priority date | — |
| Expiry date | Jan 25, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28518
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method may include providing a substrate in a plasma chamber, the substrate comprising a monocrystalline semiconductor, having an upper surface. The method may include initiating a plasma in the plasma chamber, the plasma comprising an amorphizing ion species, and applying a pulse routine to the substrate, the pulse routine comprising a plurality of extraction voltage pulses, wherein a plurality of ion pulses are directed to the substrate, and wherein an ion dose per pulse is greater than a threshold for low dose amorphization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.