Relaxor ferroelectric capacitors and methods of fabrication

US11316027B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Sou-Chi Chang · Portland, US
• Chia-Ching Lin · Daxi District, TW
• Nazila Haratipour · Hillsboro, US
• Tanay Gosavi · Portland, US
• I-Cheng Tung · Hillsboro, US
• Seung Hoon Sung · Beaverton, US
• Ian A. Young · Portland, US
• Jack T. Kavalieros · Portland, US
• Uygar E. Avci · Portland, US
• Ashish Verma Penumatcha · Hillsboro, US

Key dates

• Filing date: Mar 27, 2020
• Grant date: Apr 26, 2022
• Expiry date: May 10, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/874

Abstract

A capacitor device includes a first electrode having a first metal alloy or a metal oxide, a relaxor ferroelectric layer adjacent to the first electrode, where the ferroelectric layer includes oxygen and two or more of lead, barium, manganese, zirconium, titanium, iron, bismuth, strontium, neodymium, potassium, or niobium and a second electrode coupled with the relaxor ferroelectric layer, where the second electrode includes a second metal alloy or a second metal oxide.