Photodiode and/or PIN diode structures

US11316064B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Siva P. Adusumilli · South Burlington, US
• John J. Ellis-Monaghan · Grand Isle, US
• Mark D. Levy · Williston, US
• Vibhor Jain · Williston, US
• Andre Sturm · South Burlington, US

Key dates

• Filing date: May 29, 2020
• Grant date: Apr 26, 2022
• Expiry date: May 29, 2040

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to photodiodes and/or PIN diode structures and methods of manufacture. The structure includes: at least one fin including substrate material, the at least one fin including sidewalls and a top surface; a trench on opposing sides of the at least one fin; a first semiconductor material lining the sidewalls and the top surface of the at least one fin, and a bottom surface of the trench; a photosensitive semiconductor material on the first semiconductor material and at least partially filling the trench; and a third semiconductor material on the photosensitive semiconductor material.