High throughput insulation of 3D in-silicon high volumetric energy and power dense energy storage devices
US11316154B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2019 |
| Grant date | Apr 26, 2022 |
| Priority date | — |
| Expiry date | Aug 12, 2040 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A three dimensional (3D) In-Silicon energy storage device is provided by a method that includes forming a thick dielectric material layer on a surface of a silicon based substrate. A 3D trench is then formed into the dielectric material layer and the silicon based substrate, and thereafter a dielectric material spacer is formed, in addition to the dielectric remaining on the field of the substrate, as well as along a sidewall of the 3D trench, and on a first portion of a sub-surface of the silicon based substrate that is present at a bottom of the 3D trench. A second portion of the sub-surface of the silicon based substrate that is present in the 3D trench remains physically exposed. Active energy storage device materials can then be formed laterally adjacent to the dielectric material spacer that is within the 3D trench and on the dielectric material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.