Disilylamine compound, method for preparing the same, and composition for depositing silicon-containing thin film including the same
US11319333B2 · kind B2 · utility
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6References
11Claims
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Key dates
| Filing date | Apr 19, 2018 |
| Grant date | May 3, 2022 |
| Priority date | — |
| Expiry date | Sep 19, 2038 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided are a novel disilylamine compound, a method for preparing same, and a composition for depositing a silicon-containing thin film including the same. A disilylamine compound of the present invention has excellent reactivity, is thermally stable, and has high volatility, and thus, is used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.