Composition for forming a coating film for removing foreign matters
US11319514B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2018 |
| Grant date | May 3, 2022 |
| Priority date | — |
| Expiry date | Jul 24, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T156/1111
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A simplified method for removing foreign matters formed on a substrate in a semiconductor device manufacturing process; and a composition for forming a coating film for foreign matter removal use, which can be used in the method. A coating film is formed on a semiconductor substrate using a composition preferably containing a polyamic acid produced from (a) a tetracarboxylic dianhydride compound and (b) a diamine compound having at least one carboxyl group or a polyamic acid produced from (a) a tetracarboxylic dianhydride compound, (b) a diamine compound having at least one carboxyl group and (c) a diamine compound, and then foreign matters occurring on the coating film are removed together with the coating film by the treatment with a developing solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.