Microelectronic devices including isolation structures protruding into upper pillar portions, and related methods and systems

US11322516B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Matthew J. King · Boise, US
• David Daycock · Boise, US
• Yoshiaki Fukuzumi · Yokkaichi, JP
• Albert Fayrushin · Seojong-myeon, KR
• Richard J. Hill · Boise, US
• Chandra S. Tiwari · Boise, US
• Jun Fujiki · Yokohama, JP

Key dates

• Filing date: Aug 31, 2020
• Grant date: May 3, 2022
• Expiry date: Nov 10, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/115
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Microelectronic devices include a stack structure comprising a vertically alternating sequence of insulative structures and conductive structures arranged in tiers. A series of pillars extends through the stack structure. At least one isolation structure extends through an upper stack portion of the stack structure. The at least one isolation structure protrudes into pillars of neighboring columns of pillars of the series of pillars. Conductive contacts are in electrical communication with the pillars into which the at least one isolation structure protrudes. Related methods and electronic systems are also disclosed.