Self-timed sensing architecture for a non-volatile memory system
US11328752B2 · kind B2 · utility
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4References
8Claims
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Key dates
| Filing date | Nov 11, 2020 |
| Grant date | May 10, 2022 |
| Priority date | — |
| Expiry date | Nov 11, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/21
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A self-timed sensing architecture for reading a selected cell in an array of non-volatile cells is disclosed. The sensing circuitry generates a signal when a stable sensing value has been obtained from the selected cell, where the stable sensing value indicates the value stored in the selected cell. The signal indicates the end of the sensing operation, causing the stable sensing value to be output as the result of the read operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.