Patent · US Active

Chamber conditioning and removal processes

US11328909B2 · kind B2 · utility

1Cited by

1,017References

17Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Hanshen Zhang · Cupertino, US
Zhenjiang Cui · San Jose, US
Nitin K. Ingle · San Jose, US

Key dates

Filing date	Dec 22, 2017
Grant date	May 10, 2022
Priority date	—
Expiry date	Dec 22, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2237/3346
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Exemplary methods for conditioning a processing region of a semiconductor processing chamber may include forming conditioning plasma effluents of an oxygen-containing precursor in a semiconductor processing chamber. The methods may include contacting interior surfaces of the semiconductor processing chamber bordering a substrate processing region with the conditioning plasma effluents. The methods may also include treating the interior surfaces of the semiconductor processing chamber.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.