Patent · US Active

Method of forming a layer structure, layer structure, method of forming a contact structure, method of forming a chip package, and chip package

US11328935B2 · kind B2 · utility

0Cited by

3References

15Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Johann Gatterbauer · Parsberg, DE
Wolfgang Lehnert · Lintach, DE
Norbert Mais · Nuremberg, DE
Verena Muhr · Regensburg, DE
Edmund Riedl · Bergneustadt, DE
Harry Sax · Villach, AT

Key dates

Filing date	Jan 15, 2020
Grant date	May 10, 2022
Priority date	—
Expiry date	Jan 15, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01L23/49586
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of forming a layer structure is provided. The method may include plasma-treating a metal surface with a hydrogen-containing plasma, thereby forming nucleophilic groups over the metal surface, and forming an organic layer over the metal surface, wherein the organic layer comprises silane and is covalently bonded to the nucleophilic groups.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.