Photosensing pixel, image sensor and method of fabricating the same
US11335716B2 · kind B2 · utility
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Key dates
| Filing date | Mar 2, 2020 |
| Grant date | May 17, 2022 |
| Priority date | — |
| Expiry date | Jul 3, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
Abstract
A photosensing pixel includes a substrate, a photosensing region, a floating diffusion region, a transfer gate and a control electrode. The photosensing region is located within the substrate. The floating diffusion region is located within the substrate aside the photosensing region. The transfer gate is disposed on the substrate and extending into the photosensing region. The control electrode is located on the substrate and extending into the floating diffusion region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.