Film stack overlay improvement
US11339475B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2019 |
| Grant date | May 24, 2022 |
| Priority date | — |
| Expiry date | Jun 4, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus and a method for depositing a film layer that may have minimum contribution to overlay error after a sequence of deposition and lithographic exposure processes are provided. In one example, a method includes positioning a substrate on a substrate support in a process chamber, and flowing a deposition gas mixture comprising a silicon containing gas and a reacting gas to the process chamber through a showerhead having a convex surface facing the substrate support or a concave surface facing the substrate support in accordance with a stress profile of the substrate. A plasma is formed in the presence of the deposition gas mixture in the process chamber by applying an RF power to multiple coupling points of the showerhead that are symmetrically arranged about a center point of the showerhead. A deposition process is then performed on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.