On-wafer S-parameter calibration method

US11340286B2 · kind B2 · utility

Assignee

• THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS · CN

Inventors

• Aihua Wu · Xinzhai, CN
• Chong Li · Madoi, CN
• Chen Liu · Weihai, CN
• Yibang Wang · Shijiazhuang, CN
• Xingchang Fu · Shijiazhuang, CN
• Faguo Liang · Shijiazhuang, CN
• Xiuwei Tian · Shijiazhuang, CN
• Yanan Liu · Beijing, CN
• Jian Cao · Shanghai, CN

Key dates

• Filing date: Dec 29, 2018
• Grant date: May 24, 2022
• Expiry date: Oct 2, 2039

Classification

• Technology area (CPC G): Physics
• CPC primary: G01R35/005
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

The present application is applicable to the technical field of terahertz on-wafer measurement, and provides a new on-wafer S-parameter calibration method and device. The method includes: performing two-port calibration on a waveguide end face when a probe is not connected to a test system; performing one-port calibration on each of two probe end faces when the probe is connected to the test system; and fabricating a crosstalk calibration standard equal to a device under test in length on a substrate of the device under test, and correct a crosstalk error of the test system according to the crosstalk calibration standard. The present application can realize accurate characterization and correction of crosstalk error in a high-frequency on-wafer S-parameter calibration process, and improve the accuracy of error correction in high-frequency on-wafer S-parameter measurement.