Apparatus including a dielectric material in a central portion of a contact via, and related methods, memory devices and electronic systems
US11342265B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2019 |
| Grant date | May 24, 2022 |
| Priority date | — |
| Expiry date | Apr 22, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/41
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus comprising at least one contact structure. The at least one contact structure comprises a contact, an insulating material overlying the contact, and at least one contact via in the insulating material. The at least one contact structure also comprises a dielectric liner material adjacent the insulating material within the contact via, a conductive material adjacent the dielectric liner material, and a stress compensation material adjacent the conductive material and in a central portion of the at least one contact via. The stress compensation material is at least partially surrounded by the conductive material. Memory devices, electronic systems, and methods of forming the apparatus are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.