System for introducing dopant into a melt of semiconductor or solar-grade material via a feed tube
US11346016B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2018 |
| Grant date | May 31, 2022 |
| Priority date | — |
| Expiry date | Feb 5, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of growing a doped monocrystalline ingot using a crystal growing system is provided. The crystal growing system includes a growth chamber, a dopant feeding device, and a feed tube. The method includes preparing a melt of semiconductor or solar-grade material in a crucible disposed within the growth chamber, introducing a solid dopant into the feed tube with the dopant feeding device, melting the solid dopant within the feed tube to a form a liquid dopant, introducing the liquid dopant into the melt below a surface of the melt, and growing a monocrystalline ingot from the melt by contacting the melt with a seed crystal and pulling the seed crystal away from the melt.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.